- The Origin of the Famous, Pure 1/f Noise is Explained as an Effect of the Zero-Point Field Acting on the Free Electrons of the Conduction Current (2008) [Updated 1 decade ago]
- Review of Stochastic Electrodynamics, With and Without Spin (2008) [Updated 4 years ago]
- What is the Phenomenon That Keeps an Infinite Memory for the Fluctuactions in the Conduction Current (2008) [Updated 4 years ago]
- Three Atomic Quantites Derived From an Electrodynamics Experiment in Discharge Condition (~40000K) (2006) [Updated 4 years ago]
- Complete Conceptual Understanding of the 1/f Noise (2006) [Updated 1 decade ago]
- Zero Point Field, Stochastic Electrodynamics,Runaway,Free Electrons, Semiconductors, 1/f Noise (2006) [Updated 4 years ago]

- The Origin of the Famous, Pure 1/f Noise is Explained as an Effect of the Zero-Point Field Acting on the Free Electrons of the Conduction Current (2008) [Updated 1 decade ago]
The introduction of the ZPF leads to a probability density p0(v) (where v is the electron speed) similar to the Fermi-Dirac distribution, and to a correlation function CG(? ) of the conductance G, which, in a small, unique v interval ?v (where the electrons are at the threshold of runaways) decays as ??" with 0:003 ? " ? 0:007. The corresponding power spectral density turns out to be SG(f) = G2?"N?1(2??m)"f"?1, where f is the frequency, N the total number of electrons in the considered sample, ?m the information transmission time, and ?" a dimensionless quantity depending on electron number density N. For the purest semiconductors, ?" that turns out to be in excellent agreement with the experimental data vs N. The above result also holds for a ?nite sample because the electron di?usion in the small ?v is much more rapid than the drift velocity.

- Review of Stochastic Electrodynamics, With and Without Spin (2008) [Updated 4 years ago]
The introduction of the ZPF leads to a probability density p0(v) (where v is the electron speed) similar to the Fermi-Dirac distribution, and to a correlation function CG(? ) of the conductance G, which, in a small, unique v interval ?v (where the electrons are at the threshold of runaways) decays as ??" with 0:003 ? " ? 0:007. The corresponding power spectral density turns out to be SG(f) = G2?"N?1(2??m)"f"?1, where f is the frequency, N the total number of electrons in the considered sample, ?m the information transmission time, and ?" a dimensionless quantity depending on electron number density N. For the purest semiconductors, ?" that turns out to be in excellent agreement with the experimental data vs N. The above result also holds for a ?nite sample because the electron di?usion in the small ?v is much more rapid than the drift velocity.

- What is the Phenomenon That Keeps an Infinite Memory for the Fluctuactions in the Conduction Current (2008) [Updated 4 years ago]
If the electron acceleration aZPF due to the nonrenormalized zero-point field (ZPF) of stochastic electrodynamics (SED) is introduced in the Fokker-Planck equation accounting for electron-electron acceleration (e ? e FP), there is always a small interval dv of speed v starting from v1 where the two collision frequencies n1(v) and n2(v) appearing in the e ? e FP are both proportional to 1/v, corresponding to the threshold of runaways. Both diffusion and drift in the v space almost vanish in the small dv where n2(v) = Bn1(v) = BK/v. The Green's solution p0(v,t | v1) [or a pimple on p0(v,t ? ?) is almost crystallized, being ? t ?e with 0.003 ? e ? 0.007. There is therefore a process of reconstruction of a fluctuaction occurring in dv, and that fluctuaction decays with a power law with such a small exponent that its memory is practically infinite.

- Three Atomic Quantites Derived From an Electrodynamics Experiment in Discharge Condition (~40000K) (2006) [Updated 4 years ago]
- Complete Conceptual Understanding of the 1/f Noise (2006) [Updated 1 decade ago]
- Zero Point Field, Stochastic Electrodynamics,Runaway,Free Electrons, Semiconductors, 1/f Noise (2006) [Updated 4 years ago]